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? 2010-2012 microchip technology inc. ds22257c-page 1 mcp6441/2/4 features: ? low quiescent current: 450 na (typical) ? gain bandwidth product: 9 khz (typical) ? supply voltage range: 1.4v to 6.0v ? rail-to-rail input and output ? unity gain stable ? slew rate: 3v/ms (typical) ? extended temperature range: -40c to +125c ? no phase reversal ? small packages applications: ? portable equipment ? battery powered system ? data acquisition equipment ? sensor conditioning ? battery current sensing ? analog active filters design aids: ? spice macro models ?filterlab ? software ? microchip advanced part selector (maps) ? analog demonstration and evaluation boards ? application notes description: the mcp6441/2/4 device is a single nanopower operational amplifier (op amp), which has low quiescent current (450 na, typical) and rail-to-rail input and output operation. this op amp is unity gain stable and has a gain bandwidth product of 9 khz (typical). these devices operate with a single supply voltage as low as 1.4v. these features make the family of op amps well suited for single-supply, battery-powered applications. the mcp6441/2/4 op amp is designed with microchip?s advanced cmos process and offered in single (mcp6441), dual (mcp6442), and quad (mcp6444) configurations. all devices are available in the extended temperature range, with a power supply range of 1.4v to 6.0v. typical application package types v dd i dd 100 k 1m 1.4v v out battery current sensing 10 to 6.0v i dd v dd v out ? 10 v/v () 10 () ? ----------------------------------------- - = to l o ad mcp6441 5 4 1 2 3 v dd v in ? v in + v ss v out mcp6441 sc70-5, sot-23-5 5 1 2 3 v dd v in ? v in + v ss v outa mcp6442 soic, msop mcp6444 soic, tssop 8 7 6 v outb 4 v inb + v ina ? 5 1 2 3 v dd v ind+ v in + v ss v outa 8 7 6 v outc 4 v inb + v ina ? 9 10 14 12 11 13 v inb ? v outb v inc ? v inc + v ind ? v outd mcp6442 2x3 tdfn * v in + v in ? v ss v outb v inb ? 1 2 3 4 8 7 6 5 v inb + v dd v outa ep 9 * includes exposed thermal pad (ep); see ta bl e 3 - 1 . 450 na, 9 khz op amp
mcp6441/2/4 ds22257c-page 2 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 3 mcp6441/2/4 1.0 electrical characteristics 1.1 absolute maximum ratings ? v dd ? v ss ........................................................................7.0v current at input pins .....................................................2 ma analog inputs (v in + , v in - ) ?? .......... v ss ? 1.0v to v dd + 1.0v all other inputs and outputs ......... v ss ? 0.3v to v dd + 0.3v difference input voltage ...................................... |v dd ? v ss | output short-circuit current ................................ continuous current at output and supply pins ............................30 ma storage temperature ....................................-65c to +150c maximum junction temperature (t j ) .......................... +150c esd protection on all pins (hbm; mm) ............... 4 kv; 200v ? notice: stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rat- ing conditions for extended periods may affect device reliability. ?? see section 4.1.2 ?input voltage limits? . dc electrical specifications electrical characteristics : unless otherwise indicated, v dd = +1.4v to +6.0v, v ss = gnd, t a = +25c, v cm = v dd /2, v out v dd /2, v l = v dd /2 and r l = 1 m to v l . (refer to figure 1-1 ). parameters sym min typ max units conditions input offset input offset voltage v os -4.5 ? +4.5 mv v cm = v ss input offset drift with temperature v os / t a ?2.5?v/ct a = -40c to +125c, v cm = v ss power supply rejection ratio psrr 65 86 ? db v cm = v ss input bias current and impedance input bias current i b ?1?pa ?20?pat a = +85c ?400?pat a = +125c input offset current i os ?1?pa common mode input impedance z cm ?10 13 ||6 ? ||pf differential input impedance z diff ?10 13 ||6 ? | |pf common mode common mode input voltage range v cmr v ss -0.3 ? v dd +0.3 v common mode rejection ratio cmrr 60 76 ? db v cm = -0.3v to 6.3v, v dd = 6.0v open-loop gain dc open-loop gain (large signal) a ol 90 110 ? db v out = 0.1v to v dd -0.1v r l = 10 k to v l output maximum output voltage swing v ol, v oh v ss +20 ? v dd ?20 mv v dd = 6.0v, r l = 10 k 0.5v input overdrive output short-circuit current i sc ?3?mav dd = 1.4v ?22?mav dd = 6.0v power supply supply voltage v dd 1.4 ? 6.0 v quiescent current per amplifier i q 250 450 650 na i o = 0, v dd = 5.0v
mcp6441/2/4 ds22257c-page 4 ? 2010-2012 microchip technology inc. 1.2 test circuits the circuit used for most dc and ac tests is shown in figure 1-1 . this circuit can independently set v cm and v out (see equation 1-1 ). note that v cm is not the circuit?s common mode voltage ((v p +v m )/2), and that v ost includes v os plus the effects (on the input offset error, v ost ) of the temperature, cmrr, psrr and a ol . equation 1-1: figure 1-1: ac and dc test circuit for most specifications. ac electrical specifications electrical characteristics: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. (refer to figure 1-1 ). parameters sym min typ max units conditions ac response gain bandwidth product gbwp ? 9 ? khz phase margin pm ? 65 ? g = +1 v/v slew rate sr ? 3 ? v/ms noise input noise voltage e ni ? 5 ? vp-p f = 0.1 hz to 10 hz input noise voltage density e ni ?190?nv/ hz f = 1 khz input noise current density i ni ?0.6?fa/ hz f = 1 khz temperature specifications electrical characteristics: unless otherwise indicated, v dd = +1.4v to +6.0v and v ss = gnd. parameters sym min typ max units conditions temperature ranges operating temperature range t a -40 ? +125 c note 1 storage temperature range t a -65 ? +150 c thermal package resistances thermal resistance, 5l-sc70 ja ? 331 ? c/w thermal resistance, 5l-sot-23 ja ?220.7?c/w thermal resistance, 8l-msop ja ?211?c/w thermal resistance, 8l-soic ja ?149.5?c/w thermal resistance, 8l-2x3 tdfn ja ?52.5?c/w thermal resistance, 14l-soic ja ?95.3?c/w thermal resistance, 14l-tssop ja ? 100 ? c/w note 1: the internal junction temperature (t j ) must not exceed the absolute maximum specification of +150c. g dm r f r g ? = v cm v p v dd 2 ? + () 2 ? = v out v dd 2 ? () v p v m ? () v ost 1g dm + () ++ = where: g dm = differential mode gain (v/v) v cm = op amp?s common mode input voltage (v) v ost = op amp?s total input offset voltage (mv) v ost v in? v in+ ? = v dd r g r f v out v m c b2 c l r l v l c b1 100 k 100 k r g r f v dd /2 v p 100 k 100 k 60 pf 1m 1f 100 nf v in? v in+ c f 6.8 pf c f 6.8 pf mcp6441
? 2010-2012 microchip technology inc. ds22257c-page 5 mcp6441/2/4 2.0 typical performance curves note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-1: input offset voltage. figure 2-2: input offset voltage drift. figure 2-3: input offset voltage vs. common mode input voltage with v dd = 6.0v. figure 2-4: input offset voltage vs. common mode input voltage with v dd = 1.4v. figure 2-5: input offset voltage vs. output voltage. figure 2-6: input offset voltage vs. power supply voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0% 5% 10% 15% 20% 25% 30% 35% -4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 input offset voltage (mv) percentage of occurences 1700 samples v cm = v ss 0% 5% 10% 15% 20% 25% 30% -10 -8 -6 -4 -2 0 2 4 6 8 10 input offset voltage drift (v/c) percentage of occurences 1700 samples v cm = v ss t a = -40c to +125c -500 0 500 1000 1500 2000 2500 3000 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 common mode input voltage (v) input offset voltage (v) v dd = 6.0v representative part t a = +125c t a = +85c t a = +25c t a = -40c -500 0 500 1000 1500 2000 2500 3000 3500 4000 -0.3 -0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 common mode input voltage (v) input offset voltage (v) v dd = 1.4v representative part t a = +125c t a = +85c t a = +25c t a = -40c -1000 -800 -600 -400 -200 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 output voltage (v) input offset voltage (v) v dd = 6.0v v dd = 1.4v representative part -2000 -1600 -1200 -800 -400 0 400 800 1200 1600 2000 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 power supply voltage (v) input offset voltage (v) representative part t a = +125c t a = +85c t a = +25c t a = -40c
mcp6441/2/4 ds22257c-page 6 ? 2010-2012 microchip technology inc. note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-7: input noise voltage density vs. frequency. figure 2-8: input noise voltage density vs. common mode input voltage. figure 2-9: cmrr, psrr vs. frequency. figure 2-10: cmrr, psrr vs. ambient temperature. figure 2-11: input bias, offset current vs. ambient temperature. figure 2-12: input bias current vs. common mode input voltage. 100 1,000 0.1 1 10 100 1000 10000 frequency (hz) input noise voltage density (nv/hz) 0.1 1 10 100 1k 10k 0 50 100 150 200 250 300 350 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 common mode input voltage (v) input noise voltage density (nv/hz) f = 1 khz v dd = 6.0 v 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 frequency (hz) cmrr, psrr (db) cmrr psrr- psrr+ c representative part 50 55 60 65 70 75 80 85 90 95 100 -50 -25 0 25 50 75 100 125 ambient temperature (c) cmrr,psrr (db) psrr (v dd = 1.4v to 6.0v, v cm = v ss ) cmrr (v dd = 6.0v, v cm = -0.3v to 6.3v) cmrr (v dd = 1.4v, v cm = -0.3v to 1.7v) 1 10 100 1000 25 45 65 85 105 125 ambient temperature (c) input bias and offset currents (pa) input bias current v dd = 6.0v input offset current 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 common mode input voltage (v) input bias current (pa) v dd = 6.0v t a = +125c t a = +85c
? 2010-2012 microchip technology inc. ds22257c-page 7 mcp6441/2/4 note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-13: quiescent current vs. ambient temperature. figure 2-14: quiescent current vs. power supply voltage. figure 2-15: open-loop gain, phase vs. frequency. figure 2-16: dc open-loop gain vs. power supply voltage. figure 2-17: dc open-loop gain vs. output voltage headroom. figure 2-18: gain bandwidth product, phase margin vs. ambient temperature. 200 250 300 350 400 450 500 550 600 -50 -25 0 25 50 75 100 125 ambient temperature (c) quiescent current (na/amplifier) v dd = 6.0v v dd = 1.4v 0 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 power supply voltage (v) quiescent current (na/amplifier) t a = +125c t a = +85c t a = +25c t a = -40c -20 0 20 40 60 80 100 120 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 frequency (hz) open-loop gain (db) -210 -180 -150 -120 -90 -60 -30 0 open-loop phase () open-loop gain open-loop phase v dd = 6.0v 1m 10m 0.1 1 10 100 1k 10k 100k 60 70 80 90 100 110 120 130 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 power supply voltage (v) dc open-loop gain (db) r l = 10 k ? v ss + 0.1v < v out < v dd - 0.1v 120 130 b ) v dd = 6.0v 110 120 a in (d b dd 100 o op g a v dd = 1.4v 80 90 o pen-l o lsila 70 dc o r l = 10k l arge si gna la ol 60 0.00 0.05 0.10 0.15 0.20 0.25 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 ambient temperature (c) gain bandwidth product (khz) 0 10 20 30 40 50 60 70 80 90 phase margin () gain bandwidth product phase margin v dd = 6.0v
mcp6441/2/4 ds22257c-page 8 ? 2010-2012 microchip technology inc. note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-19: gain bandwidth product, phase margin vs. ambient temperature. figure 2-20: output short circuit current vs. power supply voltage. figure 2-21: output voltage swing vs. frequency. figure 2-22: output voltage headroom vs. output current. figure 2-23: output voltage headroom vs. ambient temperature. figure 2-24: slew rate vs. ambient temperature. 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 ambient temperature (c) gain bandwidth product (khz) 0 10 20 30 40 50 60 70 80 90 phase margin () gain bandwidth product phase margin v dd = 1.4v 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 power supply voltage (v) output short circuit current (ma) t a = -40c t a = +25c t a = +85c t a = +125c 0.1 1 10 10 100 1000 10000 frequency (hz) output voltage swing (v p-p ) v dd = 1.4v v dd = 6.0v 10 100 1k 10k 0.1 1 10 100 1000 10 100 1000 10000 output current (ma) output voltage headroom (mv) v dd - v oh @ v dd = 1.4v v ol - v ss @ v dd = 1.4v v dd - v oh @ v dd = 6.0v v ol - v ss @ v dd = 6.0v r l = 10 k ? 0.01 0.1 1 10 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 ambient temperature (c) output voltage headroom v dd - v oh or v ol - v ss (mv) v dd - v oh @ v dd = 1.4v v ol - v ss @ v dd = 1.4v v dd - v oh @ v dd = 6.0v v ol - v ss @ v dd = 6.0v 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 ambient temperature (c) slew rate (v/ms) falling edge, v dd = 6.0v rising edge, v dd = 6.0v falling edge, v dd = 1.4v rising edge, v dd = 1.4v
? 2010-2012 microchip technology inc. ds22257c-page 9 mcp6441/2/4 note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-25: small signal non-inverting pulse response. figure 2-26: small signal inverting pulse response. figure 2-27: large signal non-inverting pulse response. figure 2-28: large signal inverting pulse response. figure 2-29: the mcp6441/2/4 device shows no phase reversal. figure 2-30: closed loop output impedance vs. frequency. time (200 s/div) output voltage (20 mv/div) v dd = 6.0v g = +1 v/v time (200 s/div) output voltage (20 mv/div) v dd = 6.0v g = -1 v/v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 time (2 ms/div) output voltage (v) v dd = 6.0v g = +1 v/v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 time (2 ms/div) output voltage (v) v dd = 6.0v g = -1 v/v -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 time (2 ms/div) input,output voltage (v) v dd = 6.0v g = +2 v/v v out v in 1 10 100 1000 10000 100000 1000000 1 10 100 1000 10000 frequency (hz) closed loop output impedance ( ? ) 1 10 100 1k 10k 1 10 100 1k 10k 100k 1m g n : 101 v/v 11 v/v 1 v/v
mcp6441/2/4 ds22257c-page 10 ? 2010-2012 microchip technology inc. note: unless otherwise indicated, t a = +25c, v dd = +1.4v to +6.0v, v ss = gnd, v cm = v dd /2, v out v dd /2, v l = v dd /2, r l = 1 m to v l and c l = 60 pf. figure 2-31: measured input current vs. input voltage (below v ss ). figure 2-32: channel-to-channel separation vs. frequency (mcp6442/4 only). 1.e-12 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 input voltage (v) -i in (a) 1m 100 10 1 100n 10n 1n 100 p 10p 1p t a = -40c t a = +25c t a = +85c t a = +125c 60 70 80 90 100 110 120 130 140 150 100 1000 10000 c h a n n e l t o c h a n n e l s e p a r a t i o n ( d b ) frequency (hz) 1 00 1k input referred channel to channel separation (db) 1k 100 10k
? 2010-2012 microchip technology inc. ds22257c-page 11 mcp6441/2/4 3.0 pin descriptions descriptions of the pins are listed in table 3-1 . 3.1 analog output (v out ) the output pin is a low-impedance voltage source. 3.2 power supply pins (v dd , v ss ) the positive power supply (v dd ) is 1.4v to 6.0v higher than the negative power supply (v ss ). for normal operation, the other pins are at voltages between v ss and v dd . typically, these parts are used in a single (positive) supply configuration. in this case, v ss is connected to ground and v dd is connected to the supply. v dd will need bypass capacitors. 3.3 analog inputs (v in +, v in -) the non-inverting and inverting inputs are high- impedance cmos inputs with low bias currents. 3.4 exposed thermal pad (ep) there is an internal connection between the exposed thermal pad (ep) and the v ss pin; they must be con- nected to the same potential on the printed circuit board (pcb). this pad can be connected to a pcb ground plane to provide a larger heat sink. this improves the package thermal resistance ( ja ). table 3-1: pin function table mcp6441 mcp6442 mcp6444 symbol description sc70-5, sot-23-5 soic, msop 2x3 tdfn soic, tssop 1111v out, v outa analog output (op amp a) 4222v in ?, v ina ? inverting input (op amp a) 3333v in +, v ina + non-inverting input (op amp a) 5884v dd positive power supply ?555v inb + non-inverting input (op amp b) ?666v inb - inverting input (op amp b) ?777v outb analog output (op amp b) ???8v outc analog output (op amp c) ???9v inc - inverting input (op amp c) ???10v inc + non-inverting input (op amp c) 24411v ss negative power supply ???12v ind + non-inverting input (op amp d) ???13v ind - inverting input (op amp d) ???14v outd analog output (op amp d) ? ? 9 ? ep exposed thermal pad (ep); must be connected to v ss
mcp6441/2/4 ds22257c-page 12 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 13 mcp6441/2/4 4.0 application information the mcp6441/2/4 op amp is manufactured using microchip?s state-of-the-art cmos process, specifically designed for low power applications. 4.1 rail-to-rail input 4.1.1 phase reversal the mcp6441/2/4 op amp is designed to prevent phase reversal, when the input pins exceed the supply voltages. figure 2-29 shows the input voltage exceeding the supply voltage with no phase reversal. 4.1.2 input voltage limits in order to prevent damage and/or improper operation of the amplifier, the circuit must limit the voltages at the input pins (see section 1.1, absolute maximum ratings ? ). the electrostatic discharge (esd) protection on the inputs can be depicted as shown in figure 4-1 . this structure was chosen to protect the input transistors against many, but not all, over-voltage conditions, and to minimize the input bias current (i b ). figure 4-1: simplified analog input esd structures. the input esd diodes clamp the inputs when they try to go more than one diode drop below v ss . they also clamp any voltages that go well above v dd ; their breakdown voltage is high enough to allow normal operation, but not low enough to protect against slow over-voltage (beyond v dd ) events. very fast esd events that meet the spec are limited so that damage does not occur. in some applications, it may be necessary to prevent excessive voltages from reaching the op amp inputs; figure 4-2 shows one approach to protecting these inputs. figure 4-2: protecting the analog inputs. a significant amount of current can flow out of the inputs when the common mode voltage (v cm ) is below ground (v ss ); see figure 2-31 . 4.1.3 input current limits in order to prevent damage and/or improper operation of the amplifier, the circuit must limit the currents into the input pins (see section 1.1 ?absolute maximum ratings ?? ). figure 4-3 shows one approach to protecting these inputs. the resistors r 1 and r 2 limit the possible currents in or out of the input pins (and the esd diodes, d 1 and d 2 ). the diode currents will go through either v dd or v ss . figure 4-3: protecting the analog inputs. bond pad bond pad bond pad v dd v in + v ss input stage bond pad v in ? v 1 v dd d 1 v 2 d 2 mcp644x v out v 1 r 1 v dd d 1 min(r 1 ,r 2 )> v ss ?min(v 1 , v 2 ) 2ma v 2 r 2 d 2 mcp644x v out min(r 1 ,r 2 )> max(v 1 ,v 2 )?v dd 2ma
mcp6441/2/4 ds22257c-page 14 ? 2010-2012 microchip technology inc. 4.1.4 normal operation the input stage of the mcp6441/2/4 op amp uses two differential input stages in parallel. one operates at a low common mode input voltage (v cm ), while the other operates at a high v cm . with this topology, the device operates with a v cm up to 300 mv above v dd and 300 mv below v ss . the input offset voltage is measured at v cm =v ss ? 0.3v and v dd + 0.3v, to ensure proper operation. the transition between the input stages occurs when v cm is near v dd ?0.6v (see figures 2-3 and 2-4 ). for the best distortion performance and gain linearity, with non-inverting gains, avoid this region of operation. 4.2 rail-to-rail output the output voltage range of the mcp6441/2/4 op amp is v ss + 20 mv (minimum) and v dd ? 20 mv (maxi- mum) when r l =10k is connected to v dd /2 and v dd = 6.0v. refer to figures 2-22 and 2-23 for more information. 4.3 capacitive loads driving large capacitive loads can cause stability problems for voltage feedback op amps. as the load capacitance increases, the feedback loop?s phase margin decreases, and the closed-loop bandwidth is reduced. this produces gain peaking in the frequency response, with overshoot and ringing in the step response. while a unity-gain buffer (g = +1 v/v) is the most sensitive to the capacitive loads, all gains show the same general behavior. when driving large capacitive loads with the mcp6441/2/4 op amp (e.g., > 100 pf when g = +1 v/v), a small series resistor at the output (r iso in figure 4-4 ) improves the feedback loop?s phase mar- gin (stability) by making the output load resistive at higher frequencies. the bandwidth will be generally lower than the bandwidth with no capacitance load. figure 4-4: output resistor, r iso stabilizes large capacitive loads. figure 4-5 gives the recommended r iso values for the different capacitive loads and gains. the x-axis is the normalized load capacitance (c l /g n ), where g n is the circuit's noise gain. for non-inverting gains, g n and the signal gain are equal. for inverting gains, g n is 1+|signal gain| (e.g., -1 v/v gives g n = +2 v/v). figure 4-5: recommended r iso values for capacitive loads. after selecting r iso for your circuit, double-check the resulting frequency response peaking and step response overshoot. modify r iso ?s value until the response is reasonable. bench evaluation and simulations with the mcp6441/2/4 spice macro model are very helpful. 4.4 supply bypass the mcp6441/2/4 op amp?s power supply pin (v dd for single-supply) should have a local bypass capacitor (i.e., 0.01 f to 0.1 f) within 2 mm for good high frequency performance. it can use a bulk capacitor (i.e., 1 f or larger) within 100 mm to provide large, slow currents. this bulk capacitor can be shared with other analog parts. 4.5 pcb surface leakage in applications where low input bias current is critical, printed circuit board (pcb) surface leakage effects need to be considered. surface leakage is caused by humidity, dust or other contamination on the board. under low humidity conditions, a typical resistance between nearby traces is 10 12 . a 5v difference would cause 5 pa of current to flow, which is greater than the mcp6441/2/4 op amp?s bias current at +25c (1 pa, typical). v in r iso v out c l ? + mcp644x 1000 10000 100000 1000000 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 normalized load capacitance; c l /g n (f) recommended r iso ( ? ) g n : 1 v/v 2 v/v 5 v/v 10p 100p 1n 10n 0.1 1 1k 10k 100k 1m
? 2010-2012 microchip technology inc. ds22257c-page 15 mcp6441/2/4 the easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). the guard ring is biased at the same voltage as the sensitive pin. an example of this type of layout is shown in figure 4-6 . figure 4-6: example guard ring layout for inverting gain. 1. non-inverting gain and unity-gain buffer: a) connect the non-inverting pin (v in +) to the input with a wire that does not touch the pcb surface. b) connect the guard ring to the inverting input pin (v in ?). this biases the guard ring to the common mode input voltage. 2. inverting gain and transimpedance gain amplifiers (convert current to voltage, such as photo detectors): a) connect the guard ring to the non-inverting input pin (v in +). this biases the guard ring to the same reference voltage as the op amp (e.g., v dd /2 or ground). b) connect the inverting pin (v in ?) to the input with a wire that does not touch the pcb surface. 4.6 application circuits 4.6.1 battery current sensing the mcp6441/2/4 op amp?s common mode input range, which goes 0.3v beyond both supply rails, supports their use in high-side and low-side battery current sensing applications. the low quiescent current (450 na, typical) helps prolong battery life, and the rail-to-rail output supports detection of low currents. figure 4-7 shows a high side battery current sensor circuit. the 10 resistor is sized to minimize power losses. the battery current (i dd ) through the 10 resistor causes its top terminal to be more negative than the bottom terminal. this keeps the common mode input voltage of the op amp below v dd , which is within its allowed range. the output of the op amp will also be below v dd , within its maximum output voltage swing specification. figure 4-7: battery current sensing. guard ring v in ?v in + v ss v dd i dd 100 k 1m 1.4v v out 10 to 6.0v i dd v dd v out ? 10 v/v () 10 () ? ----------------------------------------- - = to l o a d mcp6441
mcp6441/2/4 ds22257c-page 16 ? 2010-2012 microchip technology inc. 4.6.2 precision half-wave rectifier the precision half-wave rectifier, which is also known as a super diode, is a configuration obtained with an operational amplifier in order to have a circuit behaving like an ideal diode and rectifier. it effectively cancels the forward voltage drop of the diode in such a way that very low level signals can still be rectified, with minimal error. this can be useful for high-precision signal processing. the mcp6441/2/4 op amp has high input impedance, low input bias current and rail-to-rail input/output, which makes this device suitable for precision rectifier applications. figure 4-8 shows a precision half-wave rectifier and its transfer characteristic. the rectifier?s input impedance is determined by the input resistor r 1 . to avoid the loading effect, it must be driven from a low-impedance source. when v in is greater than zero, d 1 is off, d 2 is on, and v out is zero. when v in is less than zero, d 1 is on, d 2 is off, and v out is the v in with an amplification of -r 2 /r 1 . the rectifier circuit shown in figure 4-8 has the benefit that the op amp never goes in saturation, so the only thing affecting its frequency response is the amplification and the gain bandwidth product. . figure 4-8: precision half-wave rectifier. 4.6.3 instrumentation amplifier the mcp6441/2/4 op amp is well suited for condition- ing sensor signals in battery-powered applications. figure 4-9 shows a two op amp instrumentation amplifier, using the mcp6441/2/4 device, that works well for applications requiring rejection of common mode noise at higher gains. the reference voltage (v ref ) is supplied by a low-impedance source. in sin- gle supply applications, v ref is typically v dd /2. figure 4-9: two op amp instrumentation amplifier. v out r 2 d 1 d 2 r 1 v in v out v in -r 2 /r 1 transfer characteristic precision half-wave rectifier mcp6441 v out v 1 v 2 ? () 1 r 1 r 2 ----- - 2r 1 r g --------- ++ ?? ?? v ref + = v ref r 1 r 2 r 2 r 1 v out r g v 2 v 1 1/2 mcp6442 1/2 mcp6442
? 2010-2012 microchip technology inc. ds22257c-page 17 mcp6441/2/4 5.0 design aids microchip provides the basic design tools needed for the mcp6441/2/4 op amp. 5.1 spice macro model the latest spice macro model for the mcp6441/2/4 op amp is available on the microchip web site at www.microchip.com . the model was written and tested in the official orcad (cadence ? ) owned pspice ? . for the other simulators, translation may be required. the model covers a wide aspect of the op amp's electrical specifications. not only does the model cover voltage, current and resistance of the op amp, but it also covers the temperature and the noise effects on the behavior of the op amp. the model has not been verified outside of the specification range listed in the op amp data sheet. the model behaviors under these conditions cannot ensure it will match the actual op amp performance. moreover, the model is intended to be an initial design tool. bench testing is a very important part of any design and cannot be replaced with simulations. also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 filterlab ? software microchip?s filterlab software is an innovative software tool that simplifies analog active filter design using op amps. available at no cost from the microchip web site at www.microchip.com/filterlab , the filterlab design tool provides full schematic diagrams of the filter circuit with component values. it also outputs the filter circuit in spice format, which can be used with the macro model to simulate the actual filter performance. 5.3 microchip advanced part selector (maps) maps is a software tool that helps semiconductor professionals efficiently identify the microchip devices that fit a particular design requirement. available at no cost from the microchip website at www.microchip.com/ maps , the maps is an overall selection tool for microchip?s product portfolio that includes analog, memory, mcus and dscs. using this tool, you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. helpful links are also provided for data sheets, purchase and sampling of microchip parts. 5.4 analog demonstration and evaluation boards microchip offers a broad spectrum of analog demonstration and evaluation boards that are designed to help you achieve faster time to market. for a complete listing of these boards and their corresponding user?s guides and technical information, visit the microchip web site at www.microchip.com/analogtools . some boards that are especially useful are: ? mcp6xxx amplifier evaluation board 1 ? mcp6xxx amplifier evaluation board 2 ? mcp6xxx amplifier evaluation board 3 ? mcp6xxx amplifier evaluation board 4 ? active filter demo board kit ? 5/6-pin sot-23 evaluation board, p/n vsupev2 5.5 application notes the following microchip analog design note and application notes are available on the microchip web site at www.microchip.com/appnotes , and are recommended as supplemental reference resources. ? adn003 ? ?select the right operational amplifier for your filtering circuits?, ds21821 ? an722 ? ?operational amplifier topologies and dc specifications?, ds00722 ? an723 ? ?operational amplifier ac specifications and applications?, ds00723 ? an884 ? ?driving capacitive loads with op amps?, ds00884 ? an990 ? ?analog sensor conditioning circuits ? an overview?, ds00990 ? an1177 ? ?op amp precision design: dc errors?, ds01177 ? an1228 ? ?op amp precision design: random noise?, ds01228 ? an1297 ? ?microchip?s op amp spice macro models?, ds01297 ? an1332: ?current sensing circuit concepts and fundamentals?? ds01332 these application notes and others are listed in the design guide: ? ?signal chain design guide?, ds21825
mcp6441/2/4 ds22257c-page 18 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 19 mcp6441/2/4 6.0 packaging information 6.1 package marking information example: legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e example: 5-lead sot-23 (mcp6441) 5-lead sc70 (mcp6441) example: dg25 xxnn w25 8-lead mso (mcp6442) 6442 e 211256
mcp6441/2/4 ds22257c-page 20 ? 2010-2012 microchip technology inc. legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 14-lead tssop ( mcp6444 ) example: 14-lead soic (150 mil) ( mcp6444 ) example: 8-lead soic (150 mil) (mcp6442) example: nnn mcp6442 e sn^^ 1211 256 3 e 8-lead tdfn (2x3x0.75 mm)( mcp6442 ) example: aax 211 25 mcp6444 e/sl ^^ 1211256 3 e yyww nnn xxxxxxxx 6444 e/st 1211 256
? 2010-2012 microchip technology inc. ds22257c-page 21 mcp6441/2/4 d b 1 2 3 e1 e 4 5 ee c l a1 aa2
mcp6441/2/4 ds22257c-page 22 ? 2010-2012 microchip technology inc. 5-lead plastic small outline transistor (lt) [sc70]
? 2010-2012 microchip technology inc. ds22257c-page 23 mcp6441/2/4 n b e e1 d 1 2 3 e e1 a a1 a2 c l l1
mcp6441/2/4 ds22257c-page 24 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 25 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 26 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 27 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 28 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 29 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 30 ? 2010-2012 microchip technology inc.
? 2010-2012 microchip technology inc. ds22257c-page 31 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 32 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 33 mcp6441/2/4
mcp6441/2/4 ds22257c-page 34 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 35 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 36 ? 2010-2012 microchip technology inc.
? 2010-2012 microchip technology inc. ds22257c-page 37 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 38 ? 2010-2012 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2010-2012 microchip technology inc. ds22257c-page 39 mcp6441/2/4 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp6441/2/4 ds22257c-page 40 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 41 mcp6441/2/4 appendix a: revision history revision c (april 2012) the following is the list of modifications: 1. added new package type (8-lead 2x3 tdfn) for mcp6442, and the related information throughout the document. 2. updated ta b l e 3 - 1 with tdfn package pinouts. 3. updated section 6.0, packaging information . 4. updated the product identification system section. revision b (march 2011) the following is the list of modifications: 1. added the mcp6442 and mcp6444 package information. 2. updated the esd protection value on all pins in section 1.1, absolute maximum ratings ? . 3. added figure 2-32 . 4. updated ta b l e 3 - 1 . 5. updated the package markings information and drawings. 6. updated the product identification system section. revision a (september 2010) ? original release of this document.
mcp6441/2/4 ds22257c-page 42 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 43 mcp6441/2/4 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . device: mcp6441t: single op amp (tape and reel) (sc70, sot-23) mcp6442: dual op amp (tube) (soic, msop) mcp6442t: dual op amp (tape and reel) (soic, msop, 2x3 tdfn) mcp6444: quad op amp (tube) (soic, tssop) mcp6444t: quad op amp (tape and reel) (soic, tssop) temperature range: e = -40c to +125c (extended) package: lt = plastic package (sc70), 5-lead mny* = thin plastic dual flat (2x3 tdfn), 8-lead ms = plastic msop, 8-lead ot = plastic small outline transistor (sot-23), 5-lead sl = plastic soic, (3.99 mm body), 14-lead sn = plastic soic, (3.99 mm body), 8-lead st = plastic tssop (4.4 mm body), 14-lead * y = nickel palladium gold manufacturing designator. only available on the tdfn package. part no. -x /xx package temperature range device t tape and reel examples: a) mcp6441t-e/lt: tape and reel, extended temperature 5ld sc70 package b) mcp6441t-e/ot: tape and reel, extended temperature 5ld sot-23 package c) mcp6442t-e/mny: tape and reel, extended temperature 8ld 2x3 tdfn package d) mcp6442t-e/ms: tape and reel, extended temperature 8ld msop package e) mcp6442-e/ms: tube, extended temperature 8ld msop package f) mcp6442t-e/sn: tube, extended temperature 8ld soic package g) mcp6442-e/sn: tube, extended temperature 8ld soic package h) mcp6444t-e/sl: tape and reel, extended temperature 14ld soic package i) mcp6444-e/sl: tube, extended temperature 14ld soic package j) mcp6444t-e/st: tape and reel, extended temperature 14ld tssop package k) mcp6444-e/st: tube, extended temperature 14ld tssop package
mcp6441/2/4 ds22257c-page 44 ? 2010-2012 microchip technology inc. notes:
? 2010-2012 microchip technology inc. ds22257c-page 45 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, app lication maestro, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, total endurance, tsharc, uniwindriver, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2010-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-62076-244-8 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management system certified by dnv == iso/ts 16949 ==
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